specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 1 of 5 june 2006 ap513 dcs-band 8w hbt amplifier module product information product features ? 1805 ? 1880 mhz ? 30 db gain ? -64 dbc acpr @ 28 dbm cdma2k 7fa power ? +39 dbm p1db ? +12 v single supply ? power down mode ? bias current adjustable ? rohs-complaint flange-mount pkg applications ? final stage amplifiers for repeaters ? optimized for driver amplifier pa mobile infrastructure product description the ap513 is a high dynamic range power amplifier in a rohs-compliant flange-mount package. the multi-stage amplifier module has 30 db gain, while being able to achieve high performance for dcs-band applications with +39 dbm of compressed 1db power. the module has been internally optimized for linearity to provide -64 dbc acpr at 28 dbm power for 7-carrier cdma2000 applications. the ap513 uses a high reliab ility ingap/gaas hbt process technology and does not require any external matching components. the module operates off of a +12v supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifie r to maintain high linearity over temperature. it has the added feature of a +5v power down control pin. a low-cost metal housing allows the device to have a low thermal resistance and achieves over 100 years mttf. all devices are 100% rf and dc tested. the ap513 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. this combination makes the device an excellent candidate for next generation multi-carrier 3g base stations or repeaters using the dcs1800 frequency band. functional diagram top view pin no. function 1 rf output 2 / 4 vcc 3 / 5 vpd 6 rf input case ground specifications (1) parameter units min typ max test conditions operational bandwidth mhz 1805 ? 1880 test frequency mhz 1840 adjacent channel power ratio dbc -63.6 -60 cdma2000 7 fa +28 dbm total power, 885 khz offset power gain db 27.8 30.3 32.8 pout = +28 dbm input return loss db 14 output return loss db 7.8 output p1db dbm +39 output ip3 dbm +50 pout = +28 dbm/tone, f = 1 mhz operating current (2) a 1.67 pout = +28 dbm quiescent current, icq (2) a 1.55 1.70 1.80 device voltage, vcc v +12 device voltage, vpd v +5 pull- down voltage: 0v = ?off?, 5v=?on? ruggedness vswr 10:1 p out = +39 dbm cw, all phases 1. test conditions unless otherwise noted: 25 oc. 2. the current can be adjusted through an external resist or from the 5v supply to the pull-down voltage pin (pin 3). absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +150 c rf input power (continuous) cdma2000 signal (fwd link, par 10.5 db @ .01% prob) +10 dbm operation of this device above any of th ese parameters may cause permanent damage. ordering information part no. description ap513 dcs-band 8w hbt amplifier module AP513-PCB fully-assembled evaluation board 1 2 3 4 5 6
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 2 of 5 june 2006 ap513 dcs-band 8w hbt amplifier module product information class ab configuration (AP513-PCB) the AP513-PCB and ap513 module is configured for class ab by default. the resistor ? r7 ? which sets the current draw for the amplifier is set at 0 ? in this configuration. increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page. notes: 1. please note that for reliable operation, the evaluation board and mounting plate will have to be attached to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. the use of a convection fan is also recommended in laboratory environments. details of the mounting holes used in the wj mounting plate are given on the last page of this datasheet. 2. the area around the module underneath the pcb should not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the laboratory, the power-on sequencing should be followed: 1. connect rf in and out 2. connect the voltages and ground pins as shown in the circuit. 3. apply the rf signal 4. power down with the reverse sequence dnp dnp dnp dnp dnp dnp dnp dnp dnp 0 ? 0 ? 0 ? 0 ? 10 f .01
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 3 of 5 june 2006 ap513 dcs-band 8w hbt amplifier module product information performance graphs (AP513-PCB) gain +25 c, 12vcc, icq=1.7a 28 29 30 31 32 33 1800 1820 1840 1860 1880 1900 frequency (mhz) gain (db) return loss +25 c, vcc=12v, icq=1.7a -25 -20 -15 -10 -5 0 1800 1820 1840 1860 1880 1900 frequency (mhz) magnitude (db) s11 s22 gain vs. temp 1840 mhz, vcc=12v, icq=1.7a 26 28 30 32 34 36 -40-20 0 20406080 temperature (c) gain (db) acpr vs. output power vs. temperature cdma2000 sr1, 7 fa , fc=1840 mhz, f=885 khz, vcc=12v, icq=1.7a -70 -65 -60 -55 -50 -45 24 26 28 30 32 average output power (dbm) acpr (dbc) -40 c +25 c +85 c acpr vs. output power vs. temperature cdma2000 sr1, 7 fa , fc=1840 mhz, f=1.98 mhz, vcc=12v, icq=1.7a -70 -65 -60 -55 -50 -45 24 26 28 30 32 average output power (dbm) acpr (dbc) -40 c +25 c +85 c acpr vs. output power vs. modulation type cdma2000 f=885 khz, w-cdma f=5 mhz, vcc=12v, icq=1.7a -90 -80 -70 -60 -50 -40 20 22 24 26 28 30 32 average output power (dbm) acpr / aclr (dbc) w-cdma-1fa w-cdma-2fa w-cdma-4fa cdma2k-1fa cdma2k-7fa output power / gain vs. input power 1840 mhz, +25 c, vcc=12v, icq=1.7a 28 30 32 34 36 38 40 42 -4 -2 0 2 4 6 8 10 12 input power (dbm) gain (db) / pout (dbm) pout gain icc / pae vs. output power +25 c, vcc=12v, icq=1.7a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 20 22 24 26 28 30 32 34 36 38 40 output power (dbm) icc (a) / pae pae icc icc vs. output power vcc=12v, icq=1.7a 1.50 1.55 1.60 1.65 1.70 18 20 22 24 26 28 30 32 output channel power (dbm) icc (a) -40 c +25 c +85 c imd vs. output power per tone 1840 mhz, +25 c, vcc=12v, icq=1.7a -70 -60 -50 -40 -30 -20 18 20 22 24 26 28 30 32 34 output power per tone (dbm) imd (db) imd3_upper imd3_lower oip3 vs. output power per tone 1840 mhz, +25 c, vcc=12v, icq=1.7a 30 35 40 45 50 55 20 22 24 26 28 30 32 34 output power per tone (dbm) oip3 (dbm)
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 4 of 5 june 2006 ap513 dcs-band 8w hbt amplifier module product information mttf calculation the mttf of the ap513 can be calculated by first determining how much power is being dissipated by the amplifier module. because the device?s intended application is to be a power amplifier pre- driver or final stage output amplifier, the output rf power of the amplifier will help lower the overall power dissipation. in addition, the amplifier can be biased with different quiescent currents, so the calculation of the mttf is custom to each application. the power dissipation of the device can be calculated with the following equation: p diss = v cc * i cc ? (output rf power ? input rf power), v cc = operating supply voltage = 12v i cc = operating current {the rf power is converted to watts} while the maximum recommended case temperature on the datasheet is listed at 85 ? c, it is suggested that customers maintain an mttf above 1 million hours. this would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below. maximum recommended case temperature vs. power dissipation to maintain 1 million hours mttf 50 60 70 80 90 8 1012141618202224 power dissipation (watts) maximum case temperature (c) to calculate the mttf for the module, the junction temperature needs to be determined. this can be easily calculated with the module?s power dissipation, the thermal resistance value, and the case temperature of operation: t j = p diss * r th + t case t j = junction temperature p diss = power dissipation (calculated from above) r th = thermal resistance = 4.5 ? c/w t case = case temperature of module?s heat sink from a numerical standpoint, the mttf can be calculated using the arrhenius equation: mttf = a* e (ea/k/tj) a = pre-exponential factor = 6.087 x 10 -11 hours ea = activation energy = 1.39 ev k = boltzmann?s constant = 8.617 x 10 -5 ev/ ok t j = junction temperature (ok) = t j (oc) + 273 a graphical view of the mttf can be shown in the plot below. mttf vs. junction temperature 1.e+05 1.e+06 1.e+07 130 140 150 160 170 180 junction temperature (c) mttf (hours)
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 5 of 5 june 2006 ap513 dcs-band 8w hbt amplifier module product information outline drawing 23 4 5 6 1 ap513 outline drawing for the heatsink shipped with the wj evaluation board the supplied mounting plate with the evaluation board should be mounted and attached to a larger heatsink for proper thermal operation in a laboratory environment. product marking the device will be marked with an ?ap513? designato r with an alphanumeric lot code on the top surface of the p ackage noted as ?abcd? on the drawing. a manufacturing date will also be printed as ?xxyy?, where the ?xx? represents the week number from 1 ? 52. the product will be shipped in tubes in multiples of 15. esd / msl information esd rating: class 1c value: passes at 1,000 to < 2,000 volts test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iii value: passes 500 to < 1,000 volts test: charged device model (cdm) standard: jedec standard jesd22-c101
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